Poco F2 goes through Geekbench with Snapdragon 845

Like Comment

Chinese phone maker Xiaomi is without question the most preferred smartphone maker to consider when it comes to buying value for money smartphones. The Poco F1 from last year is a clear testimonial to that, while the Redmi brand has also proven to be a force to reckon with, all thanks to its affordable, and well-specced smartphones.

The Poco F2 is no doubt the natural sequel to the Poco F1. But rumors have been flying around that the brand has finally killed the Poco F2 for the Redmi K20 series. However, Xiaomi India Head of Marketing Anuj Sharma swiftly dispelled the reports, saying the Poco F brand will not be discontinued in India as predicted by some analysts.

POCO F2

Now, there are renewed signals that the Poco F2 is actually in the works and should arrive pretty soon. Today, a leaked image of a protective film of the alleged Xiaomi POCO F2 has surfaced. There arent many details, but the film suggests the Poco F2 might launch with a water-drop notch.

poco f2

Similarly, a Xiaomi made phone dubbed the Poco F2 has made it through the Geekbench. It reveals the device is powered by the dated SD 845 Chipset, with a 6GB RAM, and run on Android 8.1. The SD 845 powers last year’s Poco F1, and given that we are two generations ahead of that, it sounds quite ridiculous releasing a Pocco F2 with the same chipset.

Brands are currently churning out mid-range to flagship devices powered by the SD 855, and the 855+, so it would make perfect sense releasing the Poco F1 sporting the SD855+.

Best Pick:  UMIDIGI F2 Quad Camera Specs Leak: More Features than iPhone 11 Pro!

 

Do not forget to get in touch with us on our Facebook and Twitter page to get the latest advances, News, Updates, review, and giveaway on smartphones, wearables and tabet PCs.

You might like

About the Author: Elias

Elias is the Pioneer Editor @ Phonereporters.com. He is in for all forms of mobile-related reports. The one you can trust

Leave a Reply

Your email address will not be published. Required fields are marked *